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| Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.00.2 Unit: mm 4.00.2 * Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.70.1 0.70.2 12.90.5 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 400 150 -55 to +150 Unit V V V 2.30.2 0.45+0.15 -0.1 2.5+0.6 -0.2 1 23 5.10.2 0.45+0.15 -0.1 2.5+0.6 -0.2 Features mA mW C C 1: Emitter 2: Collector 3: Base TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common emitter) Reverse transfer impedance Symbol VCBO VCEO VEBO hFE fT Cre Zrb Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz Min 30 20 5 70 150 230 1.3 1.6 60 250 Typ Max Unit V V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 160 C 110 to 250 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00098CED 1 2SC0829 PC Ta 500 IC VCE 12 IB = 100 A Ta = 25C IC VBE 60 VCE = 10 V Collector power dissipation PC (mW) 400 10 50 Collector current IC (mA) Collector current IC (mA) 80 A 8 60 A 6 40 A 40 25C 30 Ta = 75C -25C 300 200 4 20 100 2 20 A 10 0 0 40 80 120 160 0 0 4 8 12 16 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) IB VBE Collector-emitter saturation voltage VCE(sat) (V) 120 VCE = 10 V Ta = 25C VCE(sat) IC 100 IC / IB = 10 hFE IC 300 VCE = 10 V Base current IB (A) 10 Forward current transfer ratio hFE 100 250 Ta = 75C 200 25C 150 -25C 80 60 1 Ta = 75C 25C 0.1 -25C 40 100 20 50 0 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 0 0.1 1 10 100 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT I E 600 Ta = 25C 80 70 60 50 40 30 20 10 0 - 0.1 Zrb IE f = 2 MHz Ta = 25C Cre VCE 2.4 Transition frequency fT (MHz) 500 Reverse transfer capacitance Cre (pF) (Common emitter) Reverse transfer impedance Zrb () 2.0 IC = 1 mA f = 10.7 MHz Ta = 25C 400 VCB = 10 V 6V 200 1.6 300 1.2 VCB = 6 V 10 V 0.8 100 0.4 0 - 0.1 -1 -10 -100 -1 -10 0 0.1 1 10 100 Emitter current IE (mA) Emitter current IE (mA) Collector-emitter voltage VCE (V) 2 SJC00098CED 2SC0829 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 10 100 IE = -1 mA f = 1 MHz Ta = 25C 12 bie gie Reverse transfer susceptance bre (mS) yie = gie + jbie VCE = 10 V 0 bre gre 100 yre = gre + jbre VCE = 10 V f = 0.45 MHz 10.7 25 10 - 0.5 Input susceptance bie (mS) 8 58 -1.0 58 - 0.4 mA -1 mA -2 mA -4 mA 6 25 10.7 IE = - 0.4 mA -1 mA -2 mA -4 mA -7 mA f = 0.45 MHz 0 4 8 12 16 20 -1.5 4 -2.0 2 -2.5 100 IE = -7 mA - 0.4 - 0.3 - 0.2 - 0.1 -3.0 - 0.5 0 Collector-base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe gfe 0 boe goe 0.45 10.7 -4 mA - 0.1 mA Forward transfer susceptance bfe (mS) -40 100 100 100 58 58 25 Output susceptance boe (mS) -20 0.45 10.7 25 -1 mA 100 58 - 0.4 mA 1.2 100 1.0 -7 mA -4 mA -2 mA -1 mA - 0.4 mA 25 0.4 10.7 0.2 IE = - 0.1 mA -2 mA 0.8 58 0.6 25 -60 58 IE = -7 mA f = 10.7 MHz -80 -100 yfe = gfe + jbfe VCE = 10 V -120 0 0 20 40 60 80 100 f = 0.45 MHz 0 0.2 0.4 yoe = goe + jboe VCE = 10 V 0.6 0.8 1.0 Forward transfer conductance gfe (mS) Output conductance goe (mS) SJC00098CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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